| In order to compare the properties of zinc oxide resistors ,which were independently doped with Nb2O5、MnO2、MgO. First-principles was used to investigate three different Nb, Mn, Mg atom doping to ZnO supercell or supercell with oxygen vacancies. The lattice structure, formation energy, O vacancies formation energy, band structure, density of state, carrier mobility, electrical conductivity were caculated .The Nb-doped cell has the biggest volume. Mg doping system has the largest formation energy and the weakest stability. The formation energy of O vacancies in Nb system is lowest , which is easy to form O vacancies .The band gap of Nb doping system is the smallest, oxygen vacancies defect increase the band gap. Mn doping system has the highest conductivity.