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引用本文格式: Sun Yan-Qing,Lou Ben-Zhuo,Huang Chao-Jun. Characteristic analysis of Al doped ZnO films prepared by RF magnetron sputter method [J]. J. At. Mol. Phys., 2019, 36: 485 (in Chinese) [孙彦清,娄本浊,黄朝军. 磁控溅镀法制备Al掺杂ZnO薄膜的特性分析 [J]. 原子与分子物理学报, 2019, 36: 485]
 
磁控溅镀法制备Al掺杂ZnO薄膜的特性分析
Characteristic analysis of Al doped ZnO films prepared by RF magnetron sputter method
摘要点击 187  全文点击 44  投稿时间:2018-05-10  修订日期:2018-06-08
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DOI编号   
中文关键词   透明导电薄膜  ZnO薄膜  Al掺杂  柔性基板  射频磁控溅镀  光电特性
英文关键词   transparent conductive films  ZnO films  Al doping  flexible substrate  RF magnetron sputtering  photoelectric property
基金项目   国家自然科学基金,省市自然科学基金
作者单位E-mail
孙彦清 陕西理工大学 sunyanqing987@sina.com 
娄本浊 陕西理工大学 benzhulou@126.com 
黄朝军 陕西理工大学  
中文摘要
    本研究以射频磁控溅镀法在柔性聚碳酸酯基板上成长Al掺杂ZnO薄膜,利用XRD、AES、霍尔效应测试仪及单色分光计测量分析Al靶功率对薄膜光电特性的影响。XRD分析表明所有薄膜的衍射峰皆以(002)面为主,Al靶功率为25 W时(002)面衍射峰强度最大,此时薄膜结晶性最佳; AES分析表明随着Al靶功率的增大,Al含量由0 at.%增至18.01 at.%,Zn含量则由72.51 at.%降至38.39 at.%,而O含量没有太大变化,这说明Al可以取代ZnO中Zn的位置;霍尔效应测量表明Al靶功率为25 W时电阻率最小,约为7.75×10-4 Ω·cm,而载子浓度及其迁移率则达到最大,分别约为9.35×1020 cm-3与8.64 cm2/V·s;分光计测量表明薄膜在可见光区的平均透射率可约达90%以上,说明本研究制备的Al掺杂ZnO薄膜是具有高透射率的透明导电薄膜。
英文摘要
    The Al doped ZnO films were prepared on flexible polycarbonate substrates by RF magnetron sputtering method and then the effect of Al target power on photoelectric properties of these films was analyzed by XRD, AES, Hall effect tester and monochromatic spectrometer. XRD analysis showed that the diffraction peak of all the films is mainly (002) surface and the peak intensity is the largest for Al target power of 25 W, that is the crystallinity is the best at 25 W. AES analysis showed that Al content increases from 0 at.% to 18.01 at.%, Zn content decreases from 72.51 at.% to 38.39 at.% and O content is not much change with Al target power increasing, which indicated Al can replace the position of Zn in ZnO. The Hall effect measurement showed that the resistivity is smallest (about 7.75×10-4 Ω·cm) while the carrier concentration and its mobility reach the maximum, about 9.35×1020 cm-3 and 8.64 cm2/V·s respectively, for Al target power of 25 W. The spectrometer measurement showed that the average transmittance of the films in the visible region is above 90 %, which shows that the Al doped ZnO films are the transparent conductive films with high transmittance.

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