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引用本文格式: Wang Yi,Wei Jie-Ming,Guo Xiang,Ma Ming-Ming,Tang Jia-Wei,Wang Ji-Hong,Luo Zi-Jiang,Yang Chen,Ding Zhao. Study on diffusion behavior of Ga droplet on AlGaAs surface without arsenic pressure [J]. J. At. Mol. Phys., 2019, 36: 856 (in Chinese) [王一,魏节敏,郭祥,马明明,汤佳伟,王继红,罗子江,杨晨,丁召. 零砷压下Ga液滴在AlGaAs表面扩散行为的研究 [J]. 原子与分子物理学报, 2019, 36: 856]
 
零砷压下Ga液滴在AlGaAs表面扩散行为的研究
Study on diffusion behavior of Ga droplet on AlGaAs surface without arsenic pressure
摘要点击 237  全文点击 65  投稿时间:2018-12-10  修订日期:2019-01-02
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DOI编号   
中文关键词   Ga液滴  扩散  Al0.4Ga0.6As
英文关键词   Ga droplets  Diffusion  Al0.4Ga0.6As
基金项目   国家自然科学基金,省市自然科学基金
作者单位E-mail
王一 贵州大学 ywang16@gzu.edu.cn 
魏节敏 贵州大学 1149023810@qq.com 
郭祥 贵州大学 516412261@qq.com 
马明明 贵州大学 914945535@qq.com 
汤佳伟 贵州大学 2108393194@qq.com 
王继红 贵州大学 174062477@qq.com 
罗子江 贵州财经大学 172787007@qq.com 
杨晨 贵州大学 9878612@qq.com 
丁召 贵州大学 zding@gzu.edu.cn 
中文摘要
    本文研究了Ga液滴在Al0.4Ga0.6As表面的扩散行为。在衬底温度为380℃时,在Al0.4Ga0.6As薄膜上沉积3MLGa液滴;在零砷压下,通过改变退火时间(0s, 150s, 300s, 450s, 600s)观察液滴形貌变化,利用剖面线、坑洞和液滴的比例变化分析发现液滴高度随时间延长越来越低,直至形成坑洞,Ga液滴内部的原子在Al0.4Ga0.6As表面上首先向外扩散,而后与表面As原子结合成环,约在退火时间到500s时扩散模式逐步变化为向下溶蚀。利用公式计算出最初Ga覆盖率约为2.6ML,并且在380℃下Ga液滴在Al0.4Ga0.6As表面的液滴消耗速率为0.0065ML/s。
英文摘要
    In this paper, the diffusion behavior of Ga droplet on the surface of Al0.4Ga0.6As was studied. The substrate temperature was set to 380℃ to deposit 3 ML-Ga droplets and the different annealing time of 0s, 150s, 300s, 450s, and 600s was applied to observe the droplet morphology change without arsenic pressure. Data were analyzed by using the line profiles and the proportion of holes and droplet, it is found that the droplet height becomes lower and lower with the increasing time until it forms a halo. Internal atoms of Ga droplets on Al0.4Ga0.6As surface are diffused outward on the surface firstly, and then combine with surface As atoms to form rings. When the annealing time reaches about 500s, the diffusion pattern of Ga atoms in the droplets turns to etching down gradually, the coverage of Ga atoms in initial droplets is about 2.6 ML, and the depletion of the Ga droplets is approximately a constant rate of 0.0065 ML/s at 380℃ on the Al0.4Ga0.6As surface.

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