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引用本文格式: Ran Jing-Yang,Gao Can-Can,Ma Kui,Yang Fa-Shun. Effects of Magnetron Sputtering Power on β- Ga2O3 Thin Films Prepared by Magnetron Sputtering [J]. J. At. Mol. Phys., 2022, 39: 043001 (in Chinese) [冉景杨,高灿灿,马奎,杨发顺. 磁控溅射功率对β-Ga2O3薄膜特性的影响 [J]. 原子与分子物理学报, 2022, 39: 043001]
 
磁控溅射功率对β-Ga2O3薄膜特性的影响
Effects of Magnetron Sputtering Power on β- Ga2O3 Thin Films Prepared by Magnetron Sputtering
摘要点击 109  全文点击 12  投稿时间:2021-06-25  修订日期:2021-07-08
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DOI编号   
中文关键词   β-Ga2O3  射频磁控溅射  溅射功率  半峰宽  晶粒尺寸
英文关键词   β-Ga2O3  RF magnetron sputtering  sputtering power  half width  grain size
基金项目   国家自然科学基金项目(61664004),半导体功率器件可靠性教育部工程研究中心开放基金项目(ERCME-KFJJ2019-(01))
作者单位E-mail
冉景杨 贵州大学大数据与信息工程学院 1669077509@qq.com 
高灿灿 贵州大学大数据与信息工程学院  
马奎 贵州大学大数据与信息工程学院  
杨发顺 贵州大学大数据与信息工程学院 fashun@126.com 
中文摘要
    近年来,第三代宽禁带半导体材料β-Ga2O3受到越来越多的关注,在材料制备、掺杂、刻蚀等方面都有广泛研究。射频磁控溅射是常用的β-Ga2O3薄膜制备方法之一,而磁控溅射法制膜往往需要进行退火处理以提高薄膜质量。本文研究溅射功率对射频磁控溅射在C面蓝宝石基底上制备得到的β-Ga2O3薄膜特性的影响。X射线衍射(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)表征结果表明,随着溅射功率的增大,半峰宽呈现先增大后减小再增大的趋势,晶粒尺寸变化与之相反。此外,通过积分球式分光光度计,研究了溅射功率对β-Ga2O3薄膜光学特性的影响。光学特性方面,薄膜吸光度随着波长的增加,先升高后下降、再升高再下降,最后吸收边在700nm附近截止,不同溅射功率制备的薄膜吸收光谱都存在两个吸收峰。
英文摘要
    In recent years, the third-generation wide-bandgap semiconductor material β-Ga2O3 has attracted more attention, and extensive research has been conducted on material preparation, doping, and etching of β-Ga2O3. RF magnetron sputtering is one of the commonly used methods for preparing β-Ga2O3 thin film, and the magnetron sputtering method often requires post annealing to improve the quality of the film. In this paper, effect of sputtering power on the film characteristics of β-Ga2O3 thin film material prepared by RF magnetron sputtering on the C-plane sapphire substrate are investigated. Testing results of X-ray diffraction(XRD), atomic force microscopy(AFM) and scanning electron microscopy(SEM) indicated that,with the increasing sputtering power, the half-peak width shows a trend of first increasing, then decreasing and then increasing, and the change of crystal grain size is opposite. In addition, the effect of sputtering power on the optical properties of β-Ga2O3 film was studied by integrating sphere spectrophotometer. In terms of optical properties, as the wavelength increases, the absorbance of the film first increases, then decreases, then increases and then decreases. Finally, the absorption edge is cut off near 700nm. There are two absorption peaks in the absorption spectra of films prepared with different sputtering powers.

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