| 引用本文格式: Zhang Peng-Fei,Zhong Rui,Wang Yao,Jia Li-Ya,Wang Fang,Liu Yu-Huai. Reduction of electron leakage in deep ultraviolet laser diodes by inverted two-step gradient stepped electron blocking layer [J]. J. At. Mol. Phys., 2023, 40(1): 014002 (in Chinese) [张鹏飞,钟瑞,王瑶,贾李亚,王芳,刘玉怀. 利用倒双阶渐变阶梯形电子阻挡层减少深紫外激光二极管的电子泄露 [J]. 原子与分子物理学报, 2023, 40(1): 014002] |
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| 利用倒双阶渐变阶梯形电子阻挡层减少深紫外激光二极管的电子泄露 |
| Reduction of electron leakage in deep ultraviolet laser diodes by inverted two-step gradient stepped electron blocking layer |
| 摘要点击 507 全文点击 124 投稿时间：2021-10-20 修订日期：2021-11-16 |
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| DOI编号
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| 中文关键词
AlGaN 深紫外激光二极管 电子阻挡层 电子泄露 |
| 英文关键词
AlGaN deep ultraviolet laser diodes electron blocking layer electron leakage |
| 基金项目
国家自然科学基金重点项目 |
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| 中文摘要
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| 本文提出了用双阶渐变阶梯和倒双阶渐变阶梯形电子阻挡层（EBL）以减少AlGaN基深紫外激光二极管(DUV-LDs)在p型区的电子泄露，并用Crosslight软件模拟仿真了双阶渐变阶梯和倒双阶渐变阶梯形EBL结构的光电特性，结果发现：具有倒双阶渐变阶梯形EBL的激光器拥有比双阶渐变阶梯形EBL激光器更高的斜率效率(SE)，更高的输出功率，更低的阈值电流和阈值电压，更高的有效势垒高度和更低的电子泄露。这意味着前者拥有更强的抑制电子泄露的能力。在与矩形EBL结构对比中发现，所提出的结构还提高了有源区载流子浓度和辐射复合速率，进一步提高了DUV-LDs的光电性能。 |
| 英文摘要
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| This paper proposes two-step gradient stepped and inverted two-step gradient stepped electron blocking layer (EBL) structures to reduce the electron leakage of AlGaN-based deep ultraviolet laser diodes (DUV-LDs) in the p-type region. The Crosslight software is used to simulate the photoelectric characteristics of the two-step gradient stepped and the inverted two-step gradient stepped EBL structures.It is found that the lasers with inverted two-step gradient stepped EBL have higher slope efficiency, higher output power, lower threshold current and threshold voltage, higher effective barrier height and lower electron leakage than those with double-step gradual stepped EBL,suggesting that the former has a stronger ability to suppress electron leakage. Compared with the rectangular EBL structure, the proposed structures also increase the carrier concentration and radiative recombination rate in the active region, and further improve the photoelectric performance of the DUV-LDs. |
