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Cite this article as: Zhang Peng-Fei,Zhong Rui,Wang Yao,Jia Li-Ya,Wang Fang,Liu Yu-Huai. Reduction of electron leakage in deep ultraviolet laser diodes by inverted two-step gradient stepped electron blocking layer [J]. J. At. Mol. Phys.(原子与分子物理学报), 2023, 40: 014002 (in Chinese)
Reduction of electron leakage in deep ultraviolet laser diodes by inverted two-step gradient stepped electron blocking layer
Hits 490  Download times 114  Received:October 20, 2021  Revised:November 16, 2021
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Key Words   AlGaN  deep ultraviolet laser diodes  electron blocking layer  electron leakage
Author NameAffiliationE-mail
Zhang Peng-Fei Zhengzhou University 18838988554@163.com 
Zhong Rui Zhengzhou University of Light Industry  
Wang Yao Zhengzhou University  
Jia Li-Ya Zhengzhou University  
Wang Fang Zhengzhou University  
Liu Yu-Huai* Zhengzhou University ieyhliu@zzu.edu.cn 
Abstract
    This paper proposes two-step gradient stepped and inverted two-step gradient stepped electron blocking layer (EBL) structures to reduce the electron leakage of AlGaN-based deep ultraviolet laser diodes (DUV-LDs) in the p-type region. The Crosslight software is used to simulate the photoelectric characteristics of the two-step gradient stepped and the inverted two-step gradient stepped EBL structures.It is found that the lasers with inverted two-step gradient stepped EBL have higher slope efficiency, higher output power, lower threshold current and threshold voltage, higher effective barrier height and lower electron leakage than those with double-step gradual stepped EBL,suggesting that the former has a stronger ability to suppress electron leakage. Compared with the rectangular EBL structure, the proposed structures also increase the carrier concentration and radiative recombination rate in the active region, and further improve the photoelectric performance of the DUV-LDs.

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