| 引用本文格式: Xu Yuan,Zhang Ao-Xiang,Zhang Peng-Fei,Wang Fang,Liu Jun-Jie,Liu Yu-Huai. Improved performance of AlGaN-based deep-ultraviolet light-emitting diodes using tapered superlattice p-AlInGaN layer [J]. J. At. Mol. Phys., 2025, 42(1): 014001 (in Chinese) 许愿,张傲翔,张鹏飞,王芳,刘俊杰,刘玉怀. 基于锥形超晶格p-AlInGaN层的AlGaN基深紫外发光二极管性能优化 [J]. 原子与分子物理学报, 2025, 42(1): 014001] |
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| 基于锥形超晶格p-AlInGaN层的AlGaN基深紫外发光二极管性能优化 |
| Improved performance of AlGaN-based deep-ultraviolet light-emitting diodes using tapered superlattice p-AlInGaN layer |
| 摘要点击 179 全文点击 69 投稿时间：2023-05-07 修订日期：2023-05-29 |
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| DOI编号
10.19855/j.1000-0364.2025.014001 |
| 中文关键词
深紫外发光二极管 AlInGaN 锥形超晶格 内部量子效率 辐射复合 |
| 英文关键词
deep-ultraviolet light-emitting diodes, AlInGaN, tapered superlattice, Internal quantum efficiency, radiative recombination. |
| 基金项目
国家自然科学基金 |
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| 中文摘要
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| 为了解决AlGaN基深紫外（DUV)发光二极管(LED)中的严重电子溢出和低空穴注入的问题，本文提出了一种新型锥形超晶格p-AlInGaN层，它大幅改善了基于AlGaN的DUV LED的光电特性。与传统结构相比，所提出结构的输出功率提高了337.8%；同时它的内部量子效率（IQE）也高达96%，并且没有效率下降现象。仿真计算结果表明，锥形超晶格p-AlInGaN层的引入明显增加了多量子阱(MQWs)内载流子的浓度并降低了量子阱(QWs)内的电场，导致了更高的辐射复合率，为改善DUV LED的性能提供了一个有吸引力的解决方案。 |
| 英文摘要
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| To address the drawbacks of severe electron spillover and low hole injection in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), we report a novel tapered superlattice p-AlInGaN layer which improves the optoelectronic properties of AlGaN-based DUV LEDs. The output power of the proposed structure is significantly improved by 337.8% compared to the conventional structure; it also has an internal quantum efficiency (IQE) of up to 96% with no efficiency droop. The simulation calculation results show that the introduction of tapered superlattice p-AlInGaN layer increases the concentration of carriers within the multiple quantum wells (MQWs) and reduces the electric field, leading to a higher radiative recombination rate and providing an attractive solution for improving the performance of DUV LEDs. |
