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引用本文格式: Xian Jing-Ru,Huang Yu-Jun,Li Yu-Lin,Xiong Zheng-Ran,Zeng Hua-Dong. Effect of uni/biaxial strain on the electronic structure and optical properties of two-dimensional MoSi2N4 [J]. J. At. Mol. Phys., 2026, 43: 046005 (in Chinese) [冼婧如,黄煜军,李昱霖,熊政燃,曾华东. 单/双轴应变对二维MoSi2N4电子结构与光学性质的影响 [J]. 原子与分子物理学报, 2026, 43(4): 046005]
 
单/双轴应变对二维MoSi2N4电子结构与光学性质的影响
Effect of uni/biaxial strain on the electronic structure and optical properties of two-dimensional MoSi2N4
摘要点击 537  全文点击 218  投稿时间:2025-01-19  修订日期:2025-03-09
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DOI编号   10.19855/j.1000-0364.2026.046005
中文关键词   二维MoSi2N4  第一性原理  单/双轴应变  电子结构  光学性质
英文关键词   2D MoSi2N4  First-principles calculations  Uni/biaxial strain  Electronic structure  Optical properties
基金项目   华南师范大学课外科研金种子培育项目基金编号(23XZGB05)
作者单位E-mail
冼婧如 华南师范大学 20228031050@m.scnu.edu.cn 
黄煜军 华南师范大学 1329249549@qq.com 
李昱霖 华南师范大学 1615406734@qq.com 
熊政燃 华南师范大学 20228031016@m.scnu.edu.cn 
曾华东* 华南师范大学 zenghd@m.scnu.edu.cn 
中文摘要
    本文采用基于密度泛函理论的第一性原理方法,研究单/双轴应变对二维MoSi2N4电子结构与光学性质的影响,结果表明本征MoSi2N4光学吸收曲线在E//x与E//y方向上呈现各向同性. 在单/双轴拉应变作用下,MoSi2N4的带隙逐渐变窄,光吸收曲线带边逐渐红移;在单/双轴压应变作用下,其带隙逐渐变宽,光吸收曲线带边逐渐蓝移. 总体来看,单/双轴应变均拓展材料的光谱响应范围. 值得注意的是,当施加-6%和6%单轴应变时,MoSi2N4的带隙反常变化,光吸收曲线表现出完全的各向异性. 本文的研究结果为充分探索MoSi2N4在光电的潜在应用提供理论指导.
英文摘要
    In this paper, the effect of uniaxial and biaxial strains on the electronic structure and optical properties of 2D MoSi2N4 is investigated by a first-principles approach based on density-functional theory. The results show that the intrinsic MoSi2N4 optical absorption curves are isotropic in the E//x and E//y directions. Under uniaxial and biaxial tensile strains, the band gap of MoSi2N4 gradually becomes narrower and the boundary of the light absorption curve is gradually red-shifted; under uniaxial and biaxial compressive strains, the band gap of MoSi2N4 gradually becomes wider and the boundary of the light absorption curve is gradually blue-shifted. Overall, both uniaxial and biaxial strains expand the spectral response range of MoSi2N4. It is noteworthy that the bandgap of MoSi2N4 varies anomalously when -6% and 6% uniaxial strains are applied, and the light absorption curves show complete anisotropy. The results of this paper provide theoretical guidance to fully explore the potential applications of MoSi2N4 in photovoltaics.

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