| Cite this article as: Ma Yu-Lin,Guo Xiang,Ding Zhao. Research on the controllable preparation of Ga atomic clusters based on molecular beam epitaxy technology [J]. J. At. Mol. Phys.(原子与分子物理学报), 2025, 42: 032004 (in Chinese) |
| Research on the controllable preparation of Ga atomic clusters based on molecular beam epitaxy technology |
| Hits 233 Download times 170 Received:September 05, 2023 Revised:September 21, 2023 |
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| DOI
10.19855/j.1000-0364.2025.032004 |
| Key Words
MBE Ga atomic cluster Ga source temperature deposition time annealing time ramp annealing |
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| Abstract
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| This study successfully prepared metal Ga atomic clusters on the Si (100) substrate surface using Molecular Beam Epitaxy (MBE) technology. The relationship between the size and morphology of these clusters and process parameters was investigated through controlled experiments. In the first set of control experiments, Ga atomic clusters were prepared at Ga source temperatures of 940°C, 970°C, and 1000°C. The results showed that an increase in Ga source temperature led to an increase in Ga evaporation, resulting in more Ga atoms deposited on the Si substrate surface. This, in turn, led to the self-assembly of Ga atoms into clusters, ultimately manifested as an increase in the height of Ga atomic clusters. In the second set of control experiments, Ga atomic clusters were prepared at deposition times of 3 s, 6 s, 10 s, 40 s, 50 s, and 60 s. The experimental results demonstrated that an increase in deposition time gradually increased the height of the clusters, primarily driven by the adsorption of new atoms and competitive effects. In the third set of control experiments, Ga atomic clusters were prepared with annealing times of 0 s, 60 s, and 300 s. The results showed that an increase in annealing time resulted in a decrease in cluster height, associated with the rearrangement and redistribution of atoms within the clusters. In the fourth set of control experiments, Ga atomic clusters were prepared at annealing temperatures of 420°C and 500°C. The experimental results indicated that annealing at 500°C promoted the ordered arrangement of Ga atomic clusters, a result of the combined effects of surface atom thermal motion and the matching of Ga atomic clusters with the Si (100) lattice. |
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