| 引用本文格式: Yin Meng-Shuang,Zhang Ao-Xiang,Zhang Peng-Fei,Jia Li-Ya,Wang Fang,Liu Jun-Jie,Liu Yu-Huai. Performance optimization of AlGaN-based deep-ultraviolet laser diodes with doped active region [J]. J. At. Mol. Phys., 2024, 41(3): 036006 (in Chinese) [尹孟爽,张傲翔,张鹏飞,贾李亚,王芳,刘俊杰,刘玉怀. 有源区掺杂的AlGaN基深紫外激光二极管性能优化 [J]. 原子与分子物理学报, 2024, 41(3): 036006] |
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| 有源区掺杂的AlGaN基深紫外激光二极管性能优化 |
| Performance optimization of AlGaN-based deep-ultraviolet laser diodes with doped active region |
| 摘要点击 73 全文点击 21 投稿时间：2022-11-14 修订日期：2022-11-27 |
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| DOI编号
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| 中文关键词
AlGaN 有源区 量子势垒 掺杂 深紫外激光二极管 |
| 英文关键词
AlGaN active region quantum barrier doped deep-ultraviolet laser diode |
| 基金项目
国家自然科学基金 |
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| 中文摘要
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| 为了改善深紫外激光二极管的性能，本文提出了有源区量子势垒n掺杂、p掺杂和n-p掺杂三种结构。利用Crosslight软件，对原始结构和有源区掺杂的三种结构进行仿真研究，比较四种结构的P-I特性曲线、V-I特性曲线、载流子浓度、辐射复合速率和能带图。仿真结果表明，有源区量子势垒n-p掺杂结构的阈值电压和阈值电流分别降至4.40V和23.8mA； 辐射复合速率达到1.64×1028cm-3/s；同一注入电流下电光转换效率达到42.1%，比原始结构增加了3.9%；改善了深紫外激光二极管的工作性能。 |
| 英文摘要
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| In order to improve the operating performance of the deep-ultraviolet laser diodes (DUV-LD) , three structures of n-doped, p-doped and n-p-doped with active region quantum barrier are proposed in this paper. Using Crosslight software, the original structure and the three structures with active region doped are simulated and studied to compare the P-I characteristic curve, V-I characteristic curve, carrier concentration, radiation recombination rates and energy band diagram of the four structures. The simulation results show that the threshold voltage and threshold current of the n-p doped structure decrease to 4.40 V and 23.8 mA, respectively; radiation recombination rate reaches 1.64cm-3/s; The electro-optical conversion efficiency reaches 42.1% at the same injection current, which increases 3.9% compared with the original structure; greatly improves the operating performance of the DUV-LD. |
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