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引用本文格式: Ma Yu-Lin,Guo Xiang,Wang Yi,Ding Zhao. Effects of growth parameters on InAs nanostructure morphology under droplet epitaxy [J]. J. At. Mol. Phys., 2024, 41(2): 022001 (in Chinese) [马玉麟,郭祥,王一,丁召. 液滴外延下生长参数对InAs纳米结构形貌的影响 [J]. 原子与分子物理学报, 2024, 41(2): 022001]
 
液滴外延下生长参数对InAs纳米结构形貌的影响
Effects of growth parameters on InAs nanostructure morphology under droplet epitaxy
摘要点击 287  全文点击 148  投稿时间:2022-06-25  修订日期:2022-07-19
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DOI编号   
中文关键词   液滴外延  沉积速率  成核率  沉积量  熟化  InAs量子点
英文关键词   droplet epitaxy  deposition rate  nucleation rate  deposition amount  ripening  InAs quantum dots
基金项目   国家自然科学基金
作者单位E-mail
马玉麟 贵州大学 2364254628@qq.com 
郭祥 贵州大学  
王一 贵州大学  
丁召* 贵州大学 zding@gzu.edu.cn 
中文摘要
    利用液滴外延法在GaAs(001)衬底表面制备InAs量子点,通过控制变量分别研究沉积速率、沉积量对In液滴在GaAs表面生长过程中的影响. 使用原子力显微镜(Atomic Force Microscope, AFM)表征InAs纳米结构形貌,得出结论:(1)沉积速率主要通过影响In液滴成核率来控制液滴的密度,即随着沉积速率的增大,In原子在衬底表面的成核率增加,InAs量子点密度增加,实验符合生长动力学经典成核理论. (2)沉积量的改变主要影响液滴的熟化过程,即随着沉积量的增大,可参与生长的活跃的In原子增加,促进了液滴熟化,使得扩散坍塌的原子数量增加,导致在InAs纳米结构中出现多量子点现象.
英文摘要
    InAs quantum dots were prepared on the surface of GaAs(001) substrate by droplet epitaxy. The effects of deposition rate and deposition amount on the growth of In droplets on GaAs surface were studied by controlling variables. Atomic Force Microscope was used to characterize the morphology of InAs nanostructures, and it was concluded that: (1) The deposition rate mainly controlled the density of the droplets by affecting the nucleation rate of In droplets, that is, with the increase of the deposition rate , the nucleation rate of In atoms on the surface of the substrate increases, and the density of InAs quantum dots increases, experiments are consistent with classical nucleation theory of growth kinetics. (2) The change of deposition amount mainly affects the ripening process of droplets, that is, with the increase of deposition amount, the number of active In atoms that can participate in growth increases, which promotes droplet ripening and increases the number of diffusion collapsed atoms, which leads to an increase in the number of atoms in diffusion collapse. Multiple quantum dots appear in InAs nanostructures.

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