| 引用本文格式: Huang Jiang-Xue,Huang Qi-Jun,He Jin,Wang Hao,Chang Sheng. Study of electronic transport properties in negative resistance devices based on zigzag aluminum nitride nanoribbons [J]. J. At. Mol. Phys., 2025, 42(2): 022004 (in Chinese) 黄绛雪,黄启俊,何进,王豪,常胜. 锯齿形氮化铝纳米带负阻器件电子输运性质研究 [J]. 原子与分子物理学报, 2025, 42(2): 022004] |
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| 锯齿形氮化铝纳米带负阻器件电子输运性质研究 |
| Study of electronic transport properties in negative resistance devices based on zigzag aluminum nitride nanoribbons |
| 摘要点击 149 全文点击 244 投稿时间：2023-06-28 修订日期：2023-07-12 |
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| DOI编号
10.19855/j.1000-0364.2025.022004 |
| 中文关键词
锯齿形氮化铝纳米带 电子输运 负微分电阻效应 第一性原理 |
| 英文关键词
ZAlNNR Electron transport Negative differential resistance effect First principle |
| 基金项目
国家自然科学基金 |
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| 中文摘要
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| 摘要：低维纳米带材料因为其结构的特异性而呈现出新奇的物理性质. 修饰纳米带的边缘能够调制其电子性质. 本文运用基于密度泛函理论(DFT)的第一性原理计算方法，探究了锯齿形氮化铝纳米带（ZAlNNR）单边氟化、单边氯化以及单边氢化的电子结构和输运特性. 研究表明：锯齿型氮化铝纳米带可以通过以上手段实现能带结构的半导体-金属转换. 计算电子输运特性，我们发现三种边缘修饰的器件均呈现出负微分电阻效应，其中AlN-F器件有最大峰谷电流比(PVCR)，达到了1.78×107，是硅烯纳米器件以及黑磷纳米器件的106倍. 值得一提的是，相比于H-AlN-Cove纳米器件，AlN-F器件能够在更小的偏压范围内实现高PVCR. 该结果为锯齿形氮化铝纳米带在低功耗纳米器件中的应用提供了广泛的前景. |
| 英文摘要
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| Abstract: Low-dimensional nanoribbon materials exhibit novel physical properties due to their structural specificities. Modifying the edges of nanoribbons can modulate their electronic properties. In this paper, we investigate the electronic structures and transport properties of zigzag aluminum nitride nanoribbons (ZAlNNR) with single-edge fluorination, single-edge chlorination, and single-edge hydrogenation using the fundamental principles based on density functional theory (DFT). It is shown that the semiconductor-to-metal transition of the energy band structure can be achieved by the above methodologies in zigzag aluminum nitride nanoribbons. Calculating the electron transport properties, we found that all three edge-modified devices exhibit negative differential resistance effects, with the AlN-F device having the maximum peak-to-valley current ratio (PVCR) of 1.78×107, which is 106 times higher than those of the silicene nanodevice and the black phosphorus nanodevice. It is worth mentioning that the AlN-F device is able to achieve high PVCR in a smaller bias range compared to H-AlN-Cove nanodevice. The results offer a wide range of prospects for the application of serrated aluminum nitride nanoribbons in low-power nanodevices. |
