| 引用本文格式: Ma Yu-Lin,Guo Xiang,Ding Zhao. Research on the controllable preparation of Ga atomic clusters based on molecular beam epitaxy technology [J]. J. At. Mol. Phys., 2025, 42: 032004 (in Chinese) [马玉麟,郭祥,丁召. 基于分子束外延技术可控制备Ga原子团簇的研究 [J]. 原子与分子物理学报, 2025, 42(3): 032004] |
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| 基于分子束外延技术可控制备Ga原子团簇的研究 |
| Research on the controllable preparation of Ga atomic clusters based on molecular beam epitaxy technology |
| 摘要点击 181 全文点击 82 投稿时间：2023-09-05 修订日期：2023-09-21 |
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| DOI编号
10.19855/j.1000-0364.2025.032004 |
| 中文关键词
MBE Ga原子团簇 Ga源温度 沉积时长 退火时长 升温退火 |
| 英文关键词
MBE Ga atomic cluster Ga source temperature deposition time annealing time ramp annealing |
| 基金项目
国家自然科学基金,省市自然科学基金 |
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| 中文摘要
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| 本研究基于分子束外延（Molecular Beam Epitaxy，MBE）技术在Si (100)衬底表面成功制备金属Ga原子团簇. 通过控制变量法，研究其尺寸形貌与工艺参数之间的关系. 第一组对照实验分别在940℃、970℃、1000℃的Ga源温度下制备Ga原子团簇. 实验结果表明，Ga源温度的升高导致Ga的蒸发量增加，进而沉积在Si衬底表面的Ga原子增多，Ga原子自组装成团簇，最终表现为Ga原子团簇的高度升高. 第二组对照实验分别在3 s、6 s、10 s 、40 s、50 s、60 s的沉积时长下制备Ga原子团簇. 实验结果表明，沉积时长增加导致团簇的高度逐渐增加，主要由新吸附原子和竞争效应驱动. 第三组对照实验分别在0 s、60 s、300 s的退火时长下制备Ga原子团簇. 实验结果表明，退火时长的增加导致团簇的高度下降和团簇内的原子重新排列和分布有关. 第四组对照实验分别在420℃、500℃的退火温度下制备Ga原子团簇. 实验结果表明，升温至500℃退火会促进Ga原子团簇呈现有序排列，是表面原子的热运动和Ga原子团簇与Si (100)的晶格匹配度的共同作用的结果. |
| 英文摘要
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| This study successfully prepared metal Ga atomic clusters on the Si (100) substrate surface using Molecular Beam Epitaxy (MBE) technology. The relationship between the size and morphology of these clusters and process parameters was investigated through controlled experiments. In the first set of control experiments, Ga atomic clusters were prepared at Ga source temperatures of 940°C, 970°C, and 1000°C. The results showed that an increase in Ga source temperature led to an increase in Ga evaporation, resulting in more Ga atoms deposited on the Si substrate surface. This, in turn, led to the self-assembly of Ga atoms into clusters, ultimately manifested as an increase in the height of Ga atomic clusters. In the second set of control experiments, Ga atomic clusters were prepared at deposition times of 3 s, 6 s, 10 s, 40 s, 50 s, and 60 s. The experimental results demonstrated that an increase in deposition time gradually increased the height of the clusters, primarily driven by the adsorption of new atoms and competitive effects. In the third set of control experiments, Ga atomic clusters were prepared with annealing times of 0 s, 60 s, and 300 s. The results showed that an increase in annealing time resulted in a decrease in cluster height, associated with the rearrangement and redistribution of atoms within the clusters. In the fourth set of control experiments, Ga atomic clusters were prepared at annealing temperatures of 420°C and 500°C. The experimental results indicated that annealing at 500°C promoted the ordered arrangement of Ga atomic clusters, a result of the combined effects of surface atom thermal motion and the matching of Ga atomic clusters with the Si (100) lattice. |
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