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Cite this article as: Cheng Si-Yuan,Liu Wen-Tao,Zhu Jian-Guo. First-principle calculation of AgSnO2 contact materials under Ni-S co-doped [J]. J. At. Mol. Phys.(原子与分子物理学报), 2023, 40: 016005 (in Chinese)
First-principle calculation of AgSnO2 contact materials under Ni-S co-doped
Hits 462  Download times 242  Received:November 01, 2021  Revised:November 25, 2021
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Key Words   AgSnO2 contact material  first principle  Co-doped  electrical properties.
Author NameAffiliationE-mail
Cheng Si-Yuan China Three Gorges University 310560793@qq.com 
Liu Wen-Tao* China Three Gorges University 2222096826@qq.com 
Zhu Jian-Guo China Three Gorges University  
Abstract
    The conductivity of SnO2 can be improved by doping. Based on the first principle of density functional theory, the lattice parameters, energy band structures and electronic densities of states of single doped Ni-SnO2, S-SnO2 and co-doped Ni-S-SnO2 are calculated by CASTEP software, and their charge layouts are analyzed. The results show that the cell volume increases slightly for S single doping, whereas it decreases slightly for Ni single doping. For Ni-S co-doping, the cell volume also increases slightly, but the increase range is less than that of S single doping. Compared with the undoped SnO2, doping can decrease the cell band gap, increase the impurity energy level, reduce the electron transition energy and enhance its conductivity. At the same time, after doping, the peak near the Fermi energy level decreases, the localization decreases, the bonding between atoms is stronger, and the material is more stable.

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