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Cite this article as: Zhou Guo-Jian,Peng Zhang-E,Liu Lin,Luo Jian-Ping. Analysis of electronic structure properties and optical effects of O and Na doped monolayer h-BN based on density functional theory [J]. J. At. Mol. Phys.(原子与分子物理学报), 2024, 41: 061002 (in Chinese)
Analysis of electronic structure properties and optical effects of O and Na doped monolayer h-BN based on density functional theory
Hits 134  Download times 36  Received:March 21, 2023  Revised:April 24, 2023
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Key Words   Single-layer h-BN  First principles  Doping  Electronic structure  optical effects
Author NameAffiliationE-mail
Zhou Guo-Jian Shanghai Institute of Technology 541848384@qq.com 
Peng Zhang-E* Shanghai Institute of Technology zhepeng@sit.edu.cn 
Liu Lin Shanghai Institute of Technology  
Luo Jian-Ping 上海应用技术大学  
Abstract
    The formation energy, electronic structure and optical effects of O and Na single doped and O-Na co-doped monolayer h-BN are studied by using the first-principles method based on density functional theory.The results show that the doping formation energy is the lowest when O is doped at N position and Na is doped at B position; In the co-doped system, O and Na are ortho-doped, and the doping formation energy is the lowest. Compared with monolayer h-BN, the band gap width of the system is reduced after introducing impurity atoms, in which O doping is n-type doping, Na doping is p-type doping, and O-Na co-doped h-BN system is a direct band gap material, which is beneficial to improve carrier mobility. In terms of optical properties, the static dielectric constant of Na doped h-BN system and O and Na co-doped h-BN increase, and the imaginary part of dielectric and optical absorption peak in the low energy region are red-shifted. Among them, the Na doped system has the most significant redshift and the strongest polarization ability. Therefore, Na monodoping and O and Na co-doping are expected to enhance the photocatalytic ability of monolayer h-BN and expand its application in photocatalysis materials, optoelectronic devices and other fields.

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