| Cite this article as: Xu Yuan,Zhang Ao-Xiang,Zhang Peng-Fei,Wang Fang,Liu Jun-Jie,Liu Yu-Huai. Improved performance of AlGaN-based deep-ultraviolet light-emitting diodes using tapered superlattice p-AlInGaN layer [J]. J. At. Mol. Phys.(原子与分子物理学报), 2025, 42: 014001 (in Chinese) |
| Improved performance of AlGaN-based deep-ultraviolet light-emitting diodes using tapered superlattice p-AlInGaN layer |
| Hits 121 Download times 33 Received:May 07, 2023 Revised:May 29, 2023 |
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| DOI
10.19855/j.1000-0364.2025.014001 |
| Key Words
deep-ultraviolet light-emitting diodes, AlInGaN, tapered superlattice, Internal quantum efficiency, radiative recombination. |
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| Abstract
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| To address the drawbacks of severe electron spillover and low hole injection in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), we report a novel tapered superlattice p-AlInGaN layer which improves the optoelectronic properties of AlGaN-based DUV LEDs. The output power of the proposed structure is significantly improved by 337.8% compared to the conventional structure; it also has an internal quantum efficiency (IQE) of up to 96% with no efficiency droop. The simulation calculation results show that the introduction of tapered superlattice p-AlInGaN layer increases the concentration of carriers within the multiple quantum wells (MQWs) and reduces the electric field, leading to a higher radiative recombination rate and providing an attractive solution for improving the performance of DUV LEDs. |
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