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Cite this article as: Ma Yu-Lin,Guo Xiang,Ding Zhao. Research on the controllable preparation of Bi atomic clusters based on molecular beam epitaxy technology [J]. J. At. Mol. Phys.(原子与分子物理学报), 2025, 42: 022003 (in Chinese)
Research on the controllable preparation of Bi atomic clusters based on molecular beam epitaxy technology
Hits 192  Download times 261  Received:June 17, 2023  Revised:June 29, 2023
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DOI   10.19855/j.1000-0364.2025.022003
Key Words   MBE  Bi atomic cluster  growth temperature  deposition time  classical nucleation theory  kinetics of crystal growth
Author NameAffiliationE-mail
Ma Yu-Lin Guizhou University 2364254628@qq.com 
Guo Xiang* 贵州大学  
Ding Zhao 贵州大学  
Abstract
    This study successfully prepared metal Bi atomic clusters on Si (111) substrate surfaces using molecular beam epitaxy (MBE) technique. Firstly, Bi atomic clusters with uniform size but different densities were prepared at growth temperatures of 100°C, 125°C, 150°C, 175°C, and 200°C. Experimental results showed that the density of Bi atomic clusters could be finely controlled by varying the growth temperature. When the temperature increased by 100°C, the density decreased from 1.05×1011 cm-2 to 2.5×107 cm-2, achieving a controllable adjustment of cluster density by four orders of magnitude. It was also found that the dependence of Bi atomic cluster density on growth temperature conformed to the classical nucleation theory. Secondly, Bi atomic clusters with the same density but different sizes were prepared at deposition times of 10 s, 15 s, and 20 s. Experimental results showed that the size of Bi atomic clusters could be finely controlled by changing the deposition time. When the deposition time increased by 10 s, the height and diameter increased from 8.5 nm and 65 nm to 13.7 nm and 100 nm, respectively, enabling a controllable adjustment of cluster size within the range of 10 nm in height and 80 nm in diameter. The dependence of Bi atomic cluster size on deposition time was found to follow crystal growth kinetics. By comparing with the preparation of conventional Group III (Al, Ga, In) atomic clusters, these results can provide experimental references and guidance for the preparation of Group V atomic clusters, thereby promoting the fabrication of nanoscale materials containing Bi.

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